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controller ic s for high side nmosfet bd2270hfv general description bd2270hfv is a gate driver for high side n - channel mosfet that comes with a discharge circuit for the output capacitive load. an internal charge pump enables the ic to drive the gate of an external high side nmosfet without using any external parts. the power up sequence is controlled by a comparator with hysteresis function. the space saving hvsof5 package is used. features built - in c harge p ump circuit drives the gate of the external n-c hannel p ower mosfet built - in d ischarge c ircuit for o utput c harge soft s tart c ircuit built - in c omparator with h ysteresis f unction at c ontrol block i nput possible to drive n - channel power mosfet applications pcs pc peripheral devices digital consumer elec tronics key specifications ? i nput v oltage r ange: 2.7v to 5.5v ? gate r ise t ime (c gate = 500pf ): 130s (typ) ? gate o utput v oltage( v cc = 5v ): 1 3. 5v( typ ) ? operating curr ent : 50 a (typ) ? s tandby current: 5a ( typ ) ? operating temperature range : - 25 c to +85 c package w(typ) d(typ) h (max) typical application circuit lineup gate o utput v oltage( v cc = 5v ) package orderable part number min typ max 10 v 13 .5 v 15v hvsof5 reel of 3000 bd2270hfv - tr bd2270hfv - gtr vcc disc gnd gate aen bd2270hfv 3.3v 3.3v load on/off v in_switch v out_switch hvsof5 1.60mm x 1.60mm x 0.60mm product structure silicon monolithic integrated circuit this product has not designed protection against radioactive rays 1/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 14 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 datashee t downloaded from: http:///
bd2270hfv data s heet block diagram pin configuration pin description p in no. p in n am e i / o function 1 v cc - power input terminal 2 gnd - ground terminal 3 aen i control input terminal turn on the external n- channel mosfet with a high level input. high level input > 2.0v, l ow level input < 0.8v 4 disc o switch output discharge termina l 5 gate o g ate drive output terminal c onnect to the gate of the external n -c hannel mosfet c ontrol charge pump (x3) osc vcc gnd aen disc gate ( top view ) 2/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet absolute maximum ratings parameter symbol rating unit supply v oltage v cc - 0.3 to + 6.0 v aen v oltage v aen - 0.3 to + 6.0 v disc v oltage v disc - 0.3 to + 6.0 v gat e v oltage v gate - 0.3 to + 15.0 v storage t emperature r ange t stg - 55 to + 150 c power d issipation pd 0.66 (note 1) w (note 1) derate by 5.35mw/ c when operating above ta = 25 c ( mounted o n a 70 mm x 70 mm x 1.6mm board) . caution: operating the ic over the abs olute maximum ratings may damage the ic. the damage can either be a sho rt circuit between pins or an open circuit between pins and the internal circuitry. therefore, it is important to co nsider circuit protection measures, such as adding a fuse, in case the ic is operated over the absolute maximum ratings. recommended operating conditions parameter symbol rating unit min typ max operating v oltage r ange v cc 2.7 - 5.5 v operating t emperature r ange t opr - 25 - + 85 c electrical characteristics (v cc = 3. 0 v, ta = 25 c unless otherwise specified) parameter symbol limit unit conditions min typ max operating current i cc - 50 75 a v aen = 2.5v standby current i stb - 5 10 a v aen = 0v aen i nput v oltage v aenh 1.55 2 2.45 v high l evel i nput v aenl 1.35 1. 9 2.35 v low l evel i nput aen i nput c urrent i aen - 3 5 a v aen = 3v gate o utput v oltage v gate 10 13.5 15 v v cc = 5v 6.6 9.5 9.9 v v cc = 3.3v 6 8.5 9 v v cc = 3v gate r ise t ime t on - 130 750 s c gate = 500pf v cc = 3 v gate > 4v gate f all t ime t off - 18 60 s c gate = 500pf v cc = 3v v gate < 0.5v disc d ischarge r esistance r disc - 200 300 v aen = 0v measurement circuit timing diagram vc c disc gnd gate aen bd2270hfv c gate on/off t on1 t off v aenh v aenl v aen v cc +1v 0.5v v gate t on2 v cc +2v t on2 t on1 t off 3/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet typical performance curve s figure 1. operating current vs supply voltage ( aen enable ) figure 3 . standby current vs supply voltage ( aen disable ) 0 2 4 6 8 10 12 14 2 3 4 5 6 supply voltage : v cc [v] operating current : i stb [a] ta=25 c 0 20 40 60 80 100 120 140 2 3 4 5 6 supply voltage : v cc [v] operating current : icc[a] ta=25 c figure 4 . standby current vs ambient temperature ( aen disable ) 0 2 4 6 8 10 12 14 -50 0 50 100 ambient temperature : ta[ ] operating current : i stb [a] v cc =3.0v 0 20 40 60 80 100 120 140 -50 0 50 100 ambient temperature : ta[ ] operating current : i dd [a] v cc =3.0v figure 2 . operating current vs ambient temperature ( aen enable ) operating current: i cc [a] operating current: i cc [a] standby current: i stb [a] standby current: i stb [a] ambient temperature : ta [c] ambient temperature : ta [c] supply voltage : v cc [v] supply voltage : v cc [v] 4/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 3 4 5 6 supply voltage : v cc [v] enable input voltage : v aen [v] 0 ta=25 c low to high high to low figure 5 . aen input voltage vs supply voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 ambient temperature : ta[ ] v cc =3.0v high to low low to high figure 6 . aen input voltage vs ambient temperature 0.0 2.0 4.0 6.0 8.0 10.0 2 3 4 5 6 supply voltage : v cc [v] aen input current : i aen [a] ta=25 c fi gure 7. aen input current vs supply voltage 0.0 2.0 4.0 6.0 8.0 10.0 -50 0 50 100 ambient temperature : ta[ ] aen input current : i aen [a] v cc =3.0v figure 8 . aen input current vs ambient temperature aen input voltage : v aen h , v aenl [v] aen input voltage : v aen h , v aenl [v] aen input current : i aen [ a ] aen input curre nt : i aen [ a ] ambient temperature : ta [c] ambient temperature : ta [c] supply voltage : v cc [v] supply voltage : v cc [v] typical performance curves - continued 5/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet typical performance curv es - continued figure 9 . gate output voltage vs supply voltage 0 2 4 6 8 10 12 14 2 3 4 5 6 supply voltage : v cc [v] gate output voltage : v gate [v] ta=25 c 0 2 4 6 8 10 12 14 -50 0 50 100 ambient temperature : ta[ ] gate output voltage : v gate [v] v cc =3.0v figure 1 0 . gate output voltage vs ambient temperature figure 1 1 . disc discharge resistance vs supply voltage 0 50 100 150 200 250 300 2 3 4 5 6 supply voltege : v cc [v] disc on resistance : r di sc [] ta=25 c figure 1 2 . disc discharge resistance vs ambient temperature 0 50 100 150 200 250 300 -50 0 50 100 ambient temperature : ta[ ] disc on resistance : r d isc [] v cc =3.0 v gate output voltage : v gate [v] gate output voltage : v gate [v] disc discharge resistance : r disc [] disc discharge resistance : r disc [] supply voltage : v cc [v] supply voltage : v cc [v] ambient temperature : ta [c] ambient temperature : ta [c] 6/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet typical performance curves - continued 0 40 80 120 160 200 2 3 4 5 6 supply voltage : v cc [v] turn on time1 : t on1 [s] ta=25 c , c gate =500pf figure 1 3 . gate rise time 1 vs supply voltage 0 40 80 120 160 200 -50 0 50 100 ambient temperature : ta[ ] turn on time1 : t on1 [s] v cc =3.0v, c gate =500pf figure 1 4 . gate rise time 1 vs ambient temperature figure 15 . gate rise time 2 vs supply voltage 0 50 100 150 200 250 300 350 2 3 4 5 6 supply voltage : v cc [v] turn on time2 : t on2 [s] ta=25 c , c gate =500pf figure 16 . gate rise time 2 vs ambient tempera ture 0 50 100 150 200 250 300 350 -50 0 50 100 ambient temperature : ta[ ] turn on time2 : t o n2 [s] v cc =3.0v, c gate =500pf ambient temperature : ta [c] ambient temperature : ta [c] supply voltage : v cc [v] supply voltage : v cc [v] gate rise time : t on1 [ s ] gate rise time : t on1 [ s ] gate rise time : t on2 [ s ] gat e rise time : t on2 [ s ] 7/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet typical performance curves - continued figure 18 . gate fall time vs ambient temperature 0 4 8 12 16 20 -50 0 50 100 ambient temperature : ta[ ] turn off time : toff[s] v cc =3.0v, c gate =500pf figure 17 . gate fall time vs supply voltage 0 4 8 12 16 20 2 3 4 5 6 supply voltage : v cc [v] turn off time : toff[s] ta=25 c, c gate =500pf 0.1 1.0 10.0 100.0 0 2 4 6 8 gate voltage above supply : v gate [v] gate drive current : i g [a] v cc =3.0v figure 2 0 . gate drive current vs gate voltage above supply (v cc = 3v) figure 19 . gate drive current vs gate voltage above supply (v cc =5v) 0.1 1.0 10.0 100.0 0 2 4 6 8 gate voltage above supply : v gate [v] gate drive current : i g [a] v cc =5.0v gate fall time : t off [ s ] gate fall time : t off [ s ] gat e drive current : i g [ a ] gate drive current : i g [ a ] gate voltage above supply : v gate [v ] gate voltage above supply : v gate [v ] ambient temperature : ta [ c] supply voltage : v cc [v] 8/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet typical wave forms time (1ms/div) figure 2 1. gate rise / fall characteristics v aen (5v/div) v gate (2v/div) v cc =3.0v c gate =500pf time (100 s/div) figure 22. gate rise characteristics v aen (5v/div) v gate (2v /div) v cc =3.0v c gate =500pf time (5 s/div) figure 23. gate fall characteristics v aen (5v/div) v gate (2v/div) v cc =3.0v c gate =500pf time (100 s/div) figure 24. gate switch rise characteristics v cc =3. 0v rtf025n03 v gate v out_switch v aen (5v/div) (2v/div) 9/ 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet typical wave forms - continued figure 29 . switch rise / fall characteristics measurement circuit diagram v aen (5v/div) (2v/div) v cc =3.0v rtf025n03 v gate v out_switch time (5 s/div) figure 25. gate switch fall characteristics time (20ms/div) figure 26. gate switch fall characteristics v aen (5v/div) (2v/div) v cc =3. 0v rtf025n03 v gate c l = 100 f v out_switch time (100 s/div) figure 27. gate switch rise characteristics v aen (5v/div) (2v/div) v cc =3.0v rss130n03 v gate v out_switch time (10 s/div) figure 28. gate switch fall characteristics v aen (5v/div) (2v/div) v cc =3.0v rss130n03 v gate v out_switch bd2270hfv vcc disc gnd gate aen 3.3v on/off v in_switch v out_switch 1f c l mosfet : rtf 025n03 rss130n03 10 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet gnd aen on/off application circuit 1. configuration of 3.3v l oad s witch figure 3 0 . confi guration of 3.3v load switch 2. configuration of 5v l oad s witch figure 3 1 . configuration of 5v load switch a 5v load switch can be configured like the 3.3v load switch. however, i f the external n -c hannel mosfet has low vgss, clamp it with a zen er diode or a similar component . 3. configuration of l ow -v oltage l oad s witch figure 3 2 . configuration of low - voltage load switch providing bd2270hfv a separate drive power supply enables configuration of a low - voltage load switch. 4. soft s tar t c onfiguration figure 3 3 . soft start configuration connecting an external capacitor to the gate terminal of bd2270hfv makes it possible to lengthen the rise time of the n -c hannel mosfet, thus achieving reduction of the inrush current to the lar ge - capacity load capacitor. bd2270hfv v cc disc gnd gate aen 3.3v 3.3v load on/off bd2270hfv v cc disc gnd gate aen 1.2v 1.2v load on/off 3.3v bd2270hfv v cc disc gnd gate aen 5v 5v load on/off gate bd2270hfv v cc disc 3.3v 3.3v load v in_switch v out_switch 11 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet application information th e system connection diagram shown here does not guarantee the operation of the application circuit . when the recommended external circuit components are changed, be sure to consider adequate margins by taking into account external parts and/or ic s dispersion including not only static characteristics, but also transient characteristics. 1. functional description the bd2270hvf is a gate driver ic for n-c hannel mosfets used as high side load switch es . this ic incorporates the following functions. (1) gate d rive the gate drive voltage of the external n-c hannel mosfet is generated by an internal charge pump in the bd2270hfv. the charge pump generates a voltage three times as high as the pow er supply voltage at the gate terminal. in addition, since this ic has an internal capacitor for the charge pump, it needs no external parts. the charge pump operates when the aen is set to high. when the aen is set to low, the gate terminal voltage is fixed to the gnd le vel. (2) output d ischarge c ircuit the output discharge circuit is enabled when the aen is set to low. when the discharge circuit is activated, the 200 (typ) mosfet switch located between the disc terminal and the gnd ter minal turns on. connecting the disc t erminal and the source side (load side) of the n -c hannel mosfet makes it possible to immediately discharge capacitive load. (3) soft s tart f unction when the aen terminal input voltage reaches the high level, the internal charge pump charges the gate of the n- channel mosfet . the t urn on time of the n -c hannel mosfet is determined by the gate capacity. in addition, connecting a capacitor to the gate terminal makes it possible to lengthen the rise of turn on time of the n-c hannel mosfet, thus achieving reduction of the inrush current to a large capacitive load. (4) analog c ontrol i nput t erminal the aen input of the bd2270hfv is connected to a hysteresis comparator. consequently, even analog signals can control the switching of the external n - channel mosfet . figure 34. operation timing to turn on the power supply (v cc , v in_switch ), set the aen to low. off v cc v in_switch v aen v gate v out_switch on on discharge circuit 12 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet power dissipation (hvsof5) ( mounted on a 70 mm x 70 mm x 1.6 mm glass epoxy board) figure 35. power d issi pation c urve (pd- ta curve) i/o equivalen ce circuit pin n ame pin no. equivalence c ircuit aen 3 disc 4 gate 5 0 100 200 300 400 500 600 700 800 0 25 50 75 100 125 150 ambient temperature : ta ( ) power dissipation : pd (mw) power dissipation : pd(mw) ambient temperature : ta ( c) 13 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet operational notes 1. reverse c onnection of p ower s upply c onnecting the power supply in reverse polarity can damage the ic. take pr ecautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the ic s power supply pins . 2. power s upply l ines d esign the pcb layout pattern to provide low impedance supply lines. s eparate the ground and supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affect ing the analog block . furthermore, con nect a capacitor to ground at all power supply pins . consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. g round voltage ensure that no pins are at a voltage below that of the ground pin at any time, ev en during transient condition. 4. g round w iring pattern when using both small - signal and large - current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to av oid fluctuations in the small - signal ground caused by large currents. also ensure that the ground traces of ex ternal components do not cause variations on the ground voltage. the ground lines must be as short and thick as possibl e to reduce line impedance. 5. thermal c onsideration should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. the absolute maximum rating of t he pd stated in this specification is when t he ic is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. in case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the pd rating. 6. recommended o perating c onditions these conditions represent a rang e within which the expected characteristics of the ic can be approximately obtained . the electrical characteristics are guaranteed under the conditions of each parameter . 7. in r ush current when power is first supplied to the ic, it is possible that the inter nal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays , especially if the ic has more than one power supply. therefore, give special consideration to power coupling capacitance, power wiring , width of ground wiring, and routing of connections. 8. operation u nder s trong e lectromagnetic f ield operating the ic in the presence of a strong electromagnetic field may cause the ic to malfunction . 9. testing on a pplication b oards when testing the ic on an application board, connecting a capacitor directly to a low - impedance output pin may subject the ic to stress. always discharge capacitors completely af ter each process or step. the ics power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. to prevent damage from static discharge, ground the ic during assem bly and use similar precautions during transport and storage. 10. inter- pin short and mounting errors ensure that the direction and position are correct when mounting the ic on the pcb. incorrect mounting may result in damaging the ic. avoid nearby pins being shorted to each other especially to ground, power supply and output pin . inter - pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few . 14 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet operational notes - continued 11. unused input pins input pins of an ic are often connected to the gate of a mos transistor. t he gate has extremely high impedance and extremely low capacitance. if left unconnected, the electric field from the outside can easily charge it. the small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the ic. so unless otherwise specified, unused inpu t pins should be connected to the power supply or ground line. 12. regarding the i nput p in of the ic this monolithic ic contains p+ isolation and p substrate layers between adjacent elements in order to keep them isolated. p - n junctions are formed at the intersection of the p layers with t he n layers of other elements, creating a parasitic diode or transistor. for example (refer to figure below): when gnd > pin a and gnd > pin b, the p - n junction operates as a parasitic diode. when gnd > pin b, the p - n junction operates as a parasitic transistor. parasitic diodes inevitably occur in the structure of the ic. the operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. therefore , conditions that cause these diodes to operate, such as applying a voltage lower than the gnd voltage to an input pin (and thus to the p substrate) shou ld be avoided. fig ure 36. example of monolithic ic structure 13. ceramic capacitor when using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to dc bias and oth ers. 14. thermal design perform thermal design in which there are adequate margins by taking into account t he p ower dissipation (pd) in actual states of use. n n p + p n n p + p substrate gnd n p + n n p + n p p substrate gnd gnd parasitic elements pin a pin a pin b pin b b c e parasitic elements gnd parasitic elements c be transistor (npn) resistor n region close-by parasitic elements 15 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet ordering information b d 2 2 7 0 h f v - g t r part n umber package hfv: hvsof 5 packaging and forming specification g: halogen free tr: embossed tape and reel marking diagram hvsof5(top view) aa part number marking lot number 16 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet physical dimension tape and reel information package name hvsof5 17 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
bd2270hfv data s heet revision history date revision changes 11 . ma r .201 3 001 new release 25.jun.2013 002 modified figure 34. 21 .aug .201 4 00 3 applied the rohm standard style and improved understandability . 18 / 18 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. tsz22111 ? 15 ? 001 tsz02201 - 0e3e0h300230 -1-2 21.aug.2014 rev.003 downloaded from: http:///
datasheet d a t a s h e e t notice C ge rev.002 ? 2013 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our products are designed and manufac tured for application in ordinary elec tronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electroni c appliances, amusement equipment, etc.). if you intend to use our products in devices requiring ex tremely high reliability (such as medical equipment (note 1) , transport equipment, traffic equipment, aircraft/spacecra ft, nuclear power controllers, fuel c ontrollers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (specific applications), please consult with the rohm sale s representative in advance. unless otherwise agreed in writing by rohm in advance, rohm shall not be in any way responsible or l iable for any damages, expenses or losses incurred by you or third parties arising from the use of any ro hms products for specific applications. (note1) medical equipment classification of the specific applications japan usa eu china class class class b class class | class 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe desi gn against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the following are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditio ns, as exemplified below. accordin gly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of an y rohms products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and c onfirmation of product performance, reliability, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, incl uding water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products ar e exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed to static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing components, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (ev en if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cl eaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subjec t to radiation-proof design. 5. please verify and confirm characteristics of the final or mounted products in using the products. 6. in particular, if a transient load (a large amount of load applied in a short per iod of time, such as pulse. is applied, confirmation of performance characteristics after on-boar d mounting is strongly recomm ended. avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading c ondition may negatively affect product performance and reliability. 7. de-rate power dissipation (pd) depending on ambient temper ature (ta). when used in seal ed area, confirm the actual ambient temperature. 8. confirm that operation temperat ure is within the specified range described in the product specification. 9. rohm shall not be in any way responsible or liable for fa ilure induced under deviant condi tion from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlori ne, bromine, etc.) flux is used, the resi due of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used; if flow soldering met hod is preferred, please consult with the rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:///
datasheet d a t a s h e e t notice C ge rev.002 ? 2013 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, pl ease allow a sufficient margin considering variations of the characteristics of the products and external components, including transient characteri stics, as well as static characteristics. 2. you agree that application notes, re ference designs, and associated data and in formation contained in this document are presented only as guidance for products use. theref ore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. rohm shall not be in any way responsible or liable for any damages, exp enses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take proper caution in your manufacturing process and storage so that voltage exceeding t he products maximum rating will not be applied to products. please take special care under dry condit ion (e.g. grounding of human body / equipment / solder iron, isolation from charged objects, se tting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriora te if the products are stor ed in the places where: [a] the products are exposed to sea winds or corros ive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to di rect sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage c ondition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm sol derability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the co rrect direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a humidity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage time period. precaution for product label qr code printed on rohm products label is for rohms internal use only. precaution for disposition when disposing products please dispose them proper ly using an authorized industry waste company. precaution for foreign exchange and foreign trade act since our products might fall under cont rolled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with rohm representative in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to application example contained in this document is for reference only. rohm does not warrant that foregoi ng information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. rohm shall not be in any way responsible or liable for infringement of any intellectual property rights or ot her damages arising from use of such information or data.: 2. no license, expressly or implied, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the information contained in this document. other precaution 1. this document may not be reprinted or reproduced, in whol e or in part, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any wa y whatsoever the products and the related technical information contained in the products or this document for any military purposes, incl uding but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:///
datasheet datasheet notice C we rev.001 ? 2014 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. downloaded from: http:///

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